Scanning Electron Microscope (SEM)

Oxidation protection of PVD silicon with a ytterbium disilicate layer produced by gas flow sputtering

Description of facility

The scanning electron microscope (SEM) is used for the imaging of the samples surface. The inner microstructure can be observed by examining fracture samples or metallographic sections. The SEM delivers higher lateral resolution than an optical microscope.

Today, the SEM is one of the basic techniques for sample characterization in materials science. By the detectors installed, qualitative as well as quantitative information on topology, phase composition, proportion and orientation is retrieved.

The fractography analysis and in situ mechanical testing is also possible. EDS is used for qualitative and quantitative chemical analysis; crystallographic orientation analysis and microtexture investigations are conducted by electron backscattered diffraction (EBSD).


  • Zeiss Ultra 55, field emission SEM , resolution 1 nm at 15 kV acceleration voltage.
  • Secondary (SE) and back scatter electron detectors (BSE), both as chamber and in lens types
  • Oxford AZtec EDX- System with beam control for line scan and mapping.
  • Oxford Channel5 / Nordlys II EBSD-system.
  • In-situ testing stage for mechanical tensile and compression tests from Kammrath Weiss GmbH
  • MBX Bending Module 500 N from Kammrath Weiss GmbH


  • Scanning electron microscope, equipped with EDX
  • Semi-automatic long-term analyses
  • EBSD system for identifying phases

Institute / Organization

Institute of Materials Research


Ursula Krebber
Institute of Materials Research

Jochen Krampe
Technology Marketing